| Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD |
| |
| 作者姓名： | Liang Song Zhu Hongliang Pan Jiaoqing Wang Wei |
| |
| 作者单位： | 中国科学院半导体研究所光电子研究中心,北京100083 |
| |
| 摘 要： | 用MOCVD技术在偏(1100)GaAs衬底上生长了发光波长在1.3μm的线状空间规则排列InAs量子点.光致发光实验表明,相对于正(100)衬底,偏(100)GaAs衬底上生长的InAs量子点具有更好的材料质量,光谱有更大的强度和更窄的线宽.为了得到发光波长为1.3μm的量子点,对比研究了不同In含量的InGaAs应力缓冲层(SBL)和应力盖层(SCL)的应力缓冲作用.结果表明,增加SCL中In含量能有效延伸量子点发光波长到1. 3μm,但是随着SBL中In的增加,发光波长变化不明显,并且材料质量明显下降.
|
| 关 键 词： | InAs 量子点 MOCVD InAs quantum dots MOCVD MOCVD GaAs 生长 空间规则 InAs 量子点 Ordered Space Growth Quantum Dots effective strain extend results small emissions relaxation process quantum dots strain buffer layer role better |
| 文章编号： | 0253-4177(2005)11-2074-06 |
| 修稿时间： | 2005年4月26日 |
Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD |
| |
| Liang Song,Zhu Hongliang,Pan Jiaoqing,Wang Wei.Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD[J].Chinese Journal of Semiconductors,2005,26(11):2074-2079. |
| |
| Authors: | Liang Song Zhu Hongliang Pan Jiaoqing and Wang Wei |
| |
| Affiliation: | National Research Center of Optoelectronic Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Research Center of Optoelectronic Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China;National Research Center of Optoelectronic Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China;National Research Center of Optoelectronic Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China |
| |
| Abstract: | |
| |
| Keywords: | InAs quantum dots MOCVD |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
