| GaN基稀磁半导体的离子注入研究动态 |
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| 引用本文： | 林玲,石瑛,蒋昌忠.GaN基稀磁半导体的离子注入研究动态[J].材料导报,2004,18(9):67-71. |
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| 作者姓名： | 林玲 石瑛 蒋昌忠 |
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| 作者单位： | 武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072 |
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| 摘 要： | 离子注入掺Mn的GaN基稀磁半导体,由于具有高于室温的居里温度及一系列独特性质而受到广泛重视.综述了GaN基稀磁半导体离子注入的近期研究成果,讨论了能量、剂量、温度、束流、退火条件等因素对GaMnN结构和性能的影响,并对GaMnN中铁磁性的起源,就理论和实验两方面的结果作了讨论.
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| 关 键 词： | GaN 稀磁半导体 离子注入 |
Recent Developments in Ion Implantation Studies of GaN-based Diluted Magnetic Semiconductor |
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| LIN Ling SHI Ying JIANG Changzhong.Recent Developments in Ion Implantation Studies of GaN-based Diluted Magnetic Semiconductor[J].Materials Review,2004,18(9):67-71. |
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| Authors: | LIN Ling SHI Ying JIANG Changzhong |
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| Abstract: | Mn-doped GaN-based diluted magnetic semiconductor have attracted wide attention because of its high Curie temperature and other interesting characteristics. The current status of ion implantation study of GaNbased diluted magnetic semiconductor is reviewed,the effects of energy,dose,flux,and temperature on GaMnN are discussed. The paper also puts forwards both theoretical and experimental results of the origin of magnetics in GaMnN. |
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| Keywords: | GaN |
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