| ECR Plasma CVD淀积介质膜的工艺模拟 |
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| 引用本文： | 谭满清,陆建祖,李玉鉴. ECR Plasma CVD淀积介质膜的工艺模拟[J]. 光学仪器, 1999, 0(Z1) |
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| 作者姓名： | 谭满清 陆建祖 李玉鉴 |
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| 作者单位： | 中国科学院半导体研究所工程中心!北京100083 |
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| 摘 要： | 以实验数据为基础，运用人工神经网络方法，建立了电子回旋共振等离子体化学气相沉积（ＥＣＲ Ｐｌａｓｍ ａ ＣＶＤ）淀积硅的氮、氧化物介质膜折射率ｎ 与气流配比Ｑ（Ｎ２）／Ｑ（ＳｉＨ４）和Ｑ（Ｏ２）／Ｑ（ＳｉＨ４）关系的数学模型，此模型在给定气流配比Ｑ（Ｎ２ ）／Ｑ（ＳｉＨ４）和Ｑ（Ｏ２）／Ｑ（ＳｉＨ４）时所预测的成膜折射率跟实验值符合得很好，该数学模型为ＥＣＲ Ｐｌａｓｍ ａ ＣＶＤ淀积全介质光学膜的工艺模拟打下坚实的基础。
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| 关 键 词： | ECRPlasmaCVD 人工神经网络 气流配比 折射率 |
Simulation Based Prediction of Refractive Index of Dielectric Thin Film Deposition by ECR Plasma CVD |
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| TAN Manqing LU Jianzu LI Yujian. Simulation Based Prediction of Refractive Index of Dielectric Thin Film Deposition by ECR Plasma CVD[J]. Optical Instruments, 1999, 0(Z1) |
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| Authors: | TAN Manqing LU Jianzu LI Yujian |
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| Abstract: | Based on experiment result, a mathematical model has been established in this paper for the relation between refractive index n of silicon oxide or nitride and gas ratio Q(N 2)/Q(SiH 4),Q(O 2)/Q(SiH 4) by artificial neural network. A good prediction is made for the refractive index n by the model when gas ratioQ(N 2)/Q(SiH 4),Q(O 2)/Q(SiH 4) are given. And the model is basic of simulation for all dielectric optical coatings deposition by ECR plasma CVD. |
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| Keywords: | ECR Plasma CVD Artificial Neural Network Gas Ratio Refractive Index. |
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