Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs |
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| Authors: | P. Chiney J. Branlard S. Aboud M. Saraniti S. Goodnick |
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| Affiliation: | (1) Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL 60616, USA;(2) Electrical and Computer Engineering Department, Worcester Polytechnic Institute, Worcester, MA 01609-2280, USA;(3) Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL 60616, USA;(4) Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, USA |
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| Abstract: | In this work, a 25 nm gate length three-dimensional tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation tool. The tri-gate FETs have shown superior scalability over planar device structures, reduction of short channel effects, higher drive currents and excellent gate-channel controllability compared to their planar counterparts. Simulations were performed by scaling the length and the width of the tri-gate SOI FET channel to study its short-channel and short-width effects. The influence of the scaling on the dynamic response has also been explored by performing a frequency analysis on the device. |
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| Keywords: | tri-gate FETs p-FETs scaling frequency analysis omega FET Monte Carlo simulation |
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