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Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device |
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| Authors: | L. D. Varma Sangani Ch. Ravi Kumar M. Ghanashyam Krishna |
| Affiliation: | 1. Centre for Advanced Studies in Electronics Science and Technology, School of Physics, University of Hyderabad, Hyderabad, Telangana, 500046, India |
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