| 功率MOSFET并联均流仿真分析 |
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| 引用本文： | 余娟,李晓强,余向阳.功率MOSFET并联均流仿真分析[J].信息技术,2011(8):25-28. |
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| 作者姓名： | 余娟 李晓强 余向阳 |
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| 作者单位： | 1. 陕西师范大学物理学与信息技术学院,西安,710062
2. 西安理工大学,西安,710048 |
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| 摘 要： | 研究多个功率MOSFET并联均流问题。由于市场上的MOSFET功率普遍较小,当电路要求大电流时可将多个MOSFET并联,但一些因素会造成并联管电流分配不均从而导致管子损坏。从器件参数、栅极驱动参数、电路布线三方面分析了各参数对并联功率MOSFET电流分配以及功率损耗的影响,对各参数使用Pspice软件进行了仿真并提出了相应的均流措施,通过仿真结果进行对比,结果验证了均流措施的有效性。仿真方法和结论对实际应用有一定的参考价值。
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| 关 键 词： | 功率MOSFET 并联 均流 仿真 |
Simulation and analysis on balance current of parallel power MOSFET |
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| YU Juan,LI Xiao-qiang,YU Xiang-yang.Simulation and analysis on balance current of parallel power MOSFET[J].Information Technology,2011(8):25-28. |
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| Authors: | YU Juan LI Xiao-qiang YU Xiang-yang |
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| Affiliation: | YU Juan1,LI Xiao-qiang2,YU Xiang-yang2(1.School of Physics & Information Technology,Shanxi Normal University,Xi'an 710062,China,2.Xi'an University of Technology,Xi'an 710048,China) |
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| Abstract: | In order to enlarge the current,MOSFET can be paralleled.Due to tolerances of semiconductors,gate-drive,and mechanical parameters,the total load current is not shared equally between paralleled MOSFETs.The methods to achieving balanced current are presented and simulated,the result proves the validity of methods.Simulation method and result experiments have some reference value for practical applications. |
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| Keywords: | power MOSFET paralleling balance current simulation |
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