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微型化2GHz低噪声高选择性放大模组的研制
引用本文:周旭烨,林福华,董金明. 微型化2GHz低噪声高选择性放大模组的研制[J]. 电气电子教学学报, 2008, 30(5): 34-36
作者姓名:周旭烨  林福华  董金明
作者单位:1. 北京航空航天大学,软件学院,北京,100083
2. 东南大学,信息科学与工程学院,江苏,南京,210096
摘    要:本文介绍一种将微波低频段分布参数电路与超微细薄膜工艺结合的微型化、低噪声、高选择性的放大模组。对低噪声放大电路、椭圆函数带通滤波电路及后级平衡放大电路的设计完成后,将其制作在76×20×0.5mm^3氧化铝陶瓷基片上。本模组在1.8-2.2GHz范围内,增益Gp≥50dB,噪声系数Nf≤0.9dB,其1dB压缩点输出功率Po≈30dBm,带外抑制≥80dB。

关 键 词:低噪声放大器  椭圆带通滤波器  高选择性  超微细薄膜工艺

The Design of 2GHz Low-noise and High-selectivity Amplifier Micro-module
ZHOU Xu-ye,LIN Fu-hua,DONG Jin-ming. The Design of 2GHz Low-noise and High-selectivity Amplifier Micro-module[J]. Journal of Electrical & Electronic Engineering Education, 2008, 30(5): 34-36
Authors:ZHOU Xu-ye  LIN Fu-hua  DONG Jin-ming
Affiliation:ZHOU Xu-ye, LIN Fu-hua, DONG Jin-ming (1. Software College of Beijing University of Aeronautics and Astronautics, Beijing 100083 China; 2. School of Information Science and Engineering, Southeast University, Nanj ing 210096 China)
Abstract:In this paper, a kind of miniature amplifier module with low noise and high selectivity is introduced. This module of distributed parameters used in the lower microwave band is skillfully combined with an ultra-fine thin-film technology. Base on the design of the low-noise amplifier, the micro-strip BPF and the post balanced amplifier, this module is fabricated on 76 × 20 × 0. 5mm^3 Al2 O3 ceramic chip. The module works at the frequency band from 1.8GHz to 2. 2GHz with gain≥50dB, noise figure≤0. 9dB, output power (at ldB)≈30dBm, out band rejection≥80dB.
Keywords:LNA  elliptic function BPF  high selectivity  ultra-fine thin-film technology
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