| 电感耦合等离子体CVD室温制备的硅薄膜的结构研究 |
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| 引用本文： | 王晓强,陈强,栗军帅,杨定宇,贺德衍.电感耦合等离子体CVD室温制备的硅薄膜的结构研究[J].真空科学与技术学报,2004,24(6):465-468. |
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| 作者姓名： | 王晓强 陈强 栗军帅 杨定宇 贺德衍 |
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| 作者单位： | 兰州大学物理系,兰州,730000 |
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| 摘 要： | 用内置式单圈电感耦合等离子体化学气相沉积(ICP-CVD)方法在室温下制备Si薄膜.用傅里叶红外吸收光谱、喇曼光谱、原子力显微镜和分光椭圆偏振谱等测量分析表明,即使在室温下用ICP-CVD也获得了有纳米结晶相的Si薄膜,样品结构与源气体SiH4浓度密切相关.实验结果预示着在高电子密度的ICP-CVD过程中,活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同.
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| 关 键 词： | ICP-CVD Si薄膜 低温生长 微结构 |
| 文章编号： | 1672-7126(2004)06-0465-04 |
| 修稿时间： | 2004年4月2日 |
Structures of Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at Room Temperature |
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| Wang Xiaoqiang,Chen Qiang,Li Junshuai,Yang Dingyu and He Deyan.Structures of Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at Room Temperature[J].JOurnal of Vacuum Science and Technology,2004,24(6):465-468. |
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| Authors: | Wang Xiaoqiang Chen Qiang Li Junshuai Yang Dingyu and He Deyan |
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| Affiliation: | Wang Xiaoqiang,Chen Qiang,Li Junshuai,Yang Dingyu and He Deyan* |
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| Abstract: | Silicon films were grown on Si wafer and glass by inductively coupled plasma che mical vapor deposition (ICP-CVD) at room temperatu re with a mixture of SiH 4/H 2.The microstructures of the film were characteri zed with Fourier transform of infrared (FT-IR),Raman spectroscopy,atomic force microscopy (AFM) and ellipsometry.We found that SiH 4 concentration strongly a ffects Si film structures and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration.The results show that f ormation of the precursor radicals and the growth mechanism in ICP-CVD with hig h electron density are different from those in conventional CVD with low electro n density. |
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| Keywords: | ICP-CVD Si thin films Low-temperature growth Microstructure |
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