| GaAlAs/GaAs外延层多层膜X射线干涉条纹的研究 |
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| 引用本文： | 高大超,冯禹臣,袁佑荣. GaAlAs/GaAs外延层多层膜X射线干涉条纹的研究[J]. 半导体学报, 1988, 9(3): 262-268 |
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| 作者姓名： | 高大超 冯禹臣 袁佑荣 |
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| 作者单位： | 中国科学院长春物理研究所 长春(高大超，冯禹臣)，中国科学院长春物理研究所 长春(袁佑荣) |
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| 摘 要： | 作者在MBE法和LPE法生长的GaAlAs/GaAs外延片中观察到了多层膜的X射线干涉条纹.用X射线双晶测角仪记录了这种干涉条纹,并从条纹振荡的周期计算出外延片中相应外延层的厚度.在实验样品具有一定曲率半径(在本实验条件下10—30米)的情况下,用X射线双晶形貌法摄取了这种干涉条纹相,并对弯曲外延片的成相几何进行了分析;通过测量貌相图上干涉条纹的振荡周期,计算出了外延片的曲率半径.
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| 关 键 词： | X射线 GaAlAs/GaAs 干涉条纹 双晶形貌 迴摆曲线 |
Studies on X-Ray Interference Fringes in GaAlAs/GaAs Epitaxial Layers |
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| Gao Dachao/Changchun Institute of Physics,Academia Sinica,ChangchunFeng Yuchen/Changchun Institute of Physics,Academia Sinica,ChangchunYuan Yourong/Changchun Institute of Physics,Academia Sinica,Changchun. Studies on X-Ray Interference Fringes in GaAlAs/GaAs Epitaxial Layers[J]. Chinese Journal of Semiconductors, 1988, 9(3): 262-268 |
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| Authors: | Gao Dachao/Changchun Institute of Physics Academia Sinica ChangchunFeng Yuchen/Changchun Institute of Physics Academia Sinica ChangchunYuan Yourong/Changchun Institute of Physics Academia Sinica Changchun |
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| Abstract: | X-ray interference fringes caused by polylaminates have been observed during the growthof GaAlAs/GaAs epitaxial layers by use of MBE and LPE methods. The interference fringescan be recorded and the fringe images can be taken by use of X-ray double crystal gomometer.The results are discussed in the case of bending epitaxial GaAlAs/GaAs samples.The bendingradius of the epitaxial sample can be calculated from the inter-space of the interference frin-ges of film image,and the thickness of different layers can be calculated from oscillating periodsof their fringes in the rocking curves. |
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| Keywords: | X-ray GaAlAs/GaAs Interference fringe Double crystal topography Rocking curve |
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