Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays |
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Authors: | R. D. Rajavel D. Jamba O. K. Wu J. A. Roth P. D. Brewer J. E. Jensen C. A. Cockrum G. M. Venzor S. M. Johnson |
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Affiliation: | (1) Hughes Research Laboratories, 90265 Malibu, CA;(2) Santa Barbara Research Center, 93117 Goleta, CA |
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Abstract: | A robust process has been developed for the reproducible growth of in-situ doped Hg1?xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 1017 cm?3, with peak mobilities >200 cm2/Vs were measured in Hg0.74Cd0.26Te:As films. The p-type layers were twin-free and consistently exhibit narrow x-ray rocking curves (<40 arc sec). The reproducible growth of small lots of p-on-n LWIR detector structures has been established. For a typical lot consisting of 13 layers, the average x-value of the n-type base layer was 0.226 with a standard deviation of 0.003. The lateral compositional uniformity across a 2.5 cm × 2.5 cm wafer was × = +- 0.0006. High performance p-on-n LWIR diodes were fabricated that exhibited RoAo values (0-fov at 78K) as large as 350 Q cm2 at 10.4 µm. |
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Keywords: | As-doping HgCdTe IR detectors molecular beam epitaxy (MBE) |
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