The growth of InP crystals from the melt

The growth of InP crystals from the melt is discussed on the basis of new data on the pTx relations for the In/P system in the vicinity of stoichiometric InP. The preparation of nominally undoped n-type material by the gradient-freeze technique with visual control of the seeding process is described. Zn- and Cd-doped p-type crystals were prepared in a modified almost-isothermal apparatus in order to obtain uniform stoichiometry and regular dopant distribution. The crystals were characterized in terms of their chemical purity, dopant distribution, physical defects and electrical properties.