Manifestation of Local Magnetic Domain Reversal by Spin-Polarized Carrier Injection in (Ga,Mn)As Thin Films |
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| Authors: | A. Oiwa R. Moriya Y. Mitsumori T. Supinski H. Munekata |
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| Affiliation: | (1) Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan;(2) Communications Research Laboratory, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo, 184-8795, Japan;(3) Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw, Poland |
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| Abstract: | Recently, we have reported that the spin-polarized holes generated by the irradiation with circularly polarized light can change the magnetization orientation of III–V ferromagnetic semiconductor (Ga,Mn)As via p–d exchange interaction. In this paper, we report that a small portion of change does not return to the initial state after the light is turned off. This residual component, named as the memorization effect, exhibits ferromagnetic characteristics. This fact strongly suggests that small magnetic domains having the perpendicular magnetic axis are rotated by photogenerated carrier spins. |
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| Keywords: | ferromagnetic semiconductors spin injection magnetization switching magnetic domain |
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