Wet chemical etching of NiFe,NiFeCo AND NiMnSb for magnetic device fabrication |
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| Affiliation: | 1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;2. Plasma Therm, St. Petersburg, FL 33716, USA;1. Department of Physics, Faculty of Science, Karadeniz Technical University, 61080, Trabzon, Turkey;2. Electronics and Communication Engineering, Faculty of Technology, Karadeniz Technical University, 61830, Trabzon, Turkey;3. Instituto de Ciencia de Materiales de Aragón (CSIC-Universidad de Zaragoza), María de Luna, 3, 50018, Zaragoza, Spain;4. Energy Systems Engineering, Faculty of Technology, Karadeniz Technical University, 61830, Trabzon, Turkey;5. Department of Physics, Faculty of Arts and Sciences, Recep Tayyip Erdogan University, 53100, Rize, Turkey;6. International Institute for Nanocomposites Manufacturing (IINM), Warwick Manufacturing Group, University of Warwick, Coventry, CV4 7AL, United Kingdom;7. Department of Energy Systems Engineering, Faculty of Engineering and Architecture, Sinop University, 57000, Sinop, Turkey;1. Graduate School Chiang Mai University, Chiang Mai, 50200, Thailand;2. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand;3. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand;1. The Graduate School in Chiang Mai University (GSCMU), Chiang Mai University, Chiang Mai 50200 Thailand;2. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 Thailand;4. Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 Thailand;1. Division of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081, China;2. School of Physics and Electronic Engineering, Hanjiang Normal University, Shiyan 442000, China;3. Department of Physics, Capital Normal University, Beijing 100048, China |
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| Abstract: | Thin film NiMnSb is found to be wet chemically etched in a range of solutions, including HNO3, H2SO4:H2O2, FeCl3 and HF, with activation energies in the range 10–23 kCal mol−1, i.e. a reaction-limited regime. The degree of sidewall undercut is a function of solution type. Both NiFe and NiFeCo can be etched in H2SO4 and HNO3, with reaction-limited characteristics, while HCl at 25°C is completely selective for NiFe over NiFeCo, even for 7% Co alloys. The degree of sidewall undercut on NiFe is also a strong function of solution type. |
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