Electrically active defects in BF2+ implanted and germanium preamorphized silicon |
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| Affiliation: | 1. Optoelectronics Research Centre, University of Southampton, Southampton, United Kingdom;2. NTT Device Technology Labs, NTT corporation, Atsugi-shi, Kanagawa, Japan;3. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, Palaiseau, France;4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, United States;5. Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstr. 5, Karlsruhe, Germany;6. CNIT, Photonics Networks and Technologies Laboratory, Pisa, Italy;7. John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, United States;8. Lumiphase AG, Kilchberg, Switzerland;9. Photonic Integration, Silicon Photonics Product Division, Intel Corporation, Santa Clara, CA, United States;1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Pritzker School of Molecular Engineering, University of Chicago, Illinois 60637, USA;3. Department of Applied Physics and Physics, Yale University, New Haven, Connecticut 06511, USA;4. Yale Quantum Institute, Yale University, New Haven, Connecticut 06511, USA;1. School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China;2. Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Materials Science and Engineering, Zhejiang University, Hangzhou 311200, China;3. Institute of Solid Mechanics, Beihang University, Beijing 100191, China;4. School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;5. Normandie University, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France;1. Material Research Laboratory, Discipline of Physics and MEMS, Indian Institute of Technology Indore, Indore 452553, India;2. Computational Analysis Division, Bhabha Atomic Research Centre, Autonagar, Visakhapatnam 530012, India;3. Synchrotron Utilization section, Raja Ramanna Center for Advanced Technology, Indore 452013, India;4. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India |
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| Abstract: | Ultra-shallow p+-n junctions have been formed using 15 keV/1015 cm?2 BF2+ implantation into both Ge+-preamorphized and crystalline 〈1 0 0〉 silicon substrates. Rapid thermal annealing (RTA) for 15 s at 950°C was used for dopant electrical activation and implantation damage gettering. The electrically active defects present in these samples were characterized using Deep Level Transient Spectroscopy (DLTS) and isothermal transient capacitance (ΔC(t, T)). Two electron traps were detected in the upper half of the band gap at, respectively, Ec - 0.20 eV and Ec - 0.45 eV. They are shown to be related to Ge+ implantation-induced damage. On the other hand, BF2+ implantation along with RTA give rise to a depth distributed energy continuum which lies within the forbidden gap between Ec - 0.13 eV and Ec - 0.36 eV. From isothermal transient capacitance (ΔC(t, T)), reliable damage concentration profiles were derived. They revealed that preamorphization induces not only defects in the regrown silicon layer but also a relatively high concentration of electrically active defects as deep as 3.5 μm into the bulk. |
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