Soft X-ray fluorescence measurements of irradiated polymer films |
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| Affiliation: | 1. Department of Physics, Tulane University, New Orleans, LA 70118, USA;2. CSNSM, Bat. 108, 91405 Orsay Campus, France;3. Institute of Metal Physics, Russian Academy of Sciences, Ural Division, 620219 Yekaterinburg GSP-170, Russian Federation;4. CAMD/LSU, Baton Rouge, LA 70803, USA;5. Department of Physics, ASSRC, Yonsei University, Seoul 120-749, South Korea;6. Department of Chemistry, Faculty of Science, Kanazawa University, Kanazawa, Japan;1. Karolinska Institutet, Dept. of Lab. Medicine, Clinical Research Center (CRC), SE-141 57, Huddinge, Sweden;2. LIDDS AB, Virdings allé 32B, SE-754 50, Uppsala, Sweden;3. Karolinska University Hospital, Experimental Cancer Medicine, Novum, SE-141 86, Stockholm, Sweden;1. Department of Physics, Technical University of Denmark, Building 307, Kgs. Lyngby DK-2800, Denmark;2. European Synchrotron Radiation Facility, Grenoble 38000, France;3. DTU Danchip, Technical University of Denmark, Building 347, Kgs. Lyngby DK-2800, Denmark;4. DTU Nanotech, Technical University of Denmark, Building 345E, Kgs. Lyngby DK-2800, Denmark;5. CINF, Technical University of Denmark, Building 345E, Kgs. Lyngby DK-2800, Denmark;1. School of Aeronautics and Astronautics, Faculty of Vehicle Engineering and Mechanics, State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China;2. Science and Technology on Space Physics Laboratory, Beijing 100076, China;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China;2. Engineering Ceramics Research Department, Korea Institute of Materials Sciences, Changwon, Gyeongnam, Republic of Korea |
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| Abstract: | Fluorescent soft X-ray carbon Kα emission spectra (XES) have been used to characterize the bonding of carbon atoms in polyimide (PI) and polycarbosilane (PCS) films. The PI films have been irradiated with 40 keV nitrogen or argon ions, at fluences ranging from 1 × 1014 to 1 × 1016 cm?2. The PCS films have been irradiated with 5 × 1015 carbon ions cm?2 of 500 keV and/or annealed at 1000°C. We find that the fine structure of the carbon XES of the PI films changes with implanted ion fluence above 1 × 1014 cm?2 which we believe is due to the degradation of the PI into amorphous C:N:O. The width of the forbidden band as determined from the high-energy cut-off of the C Kα X-ray excitation decreases with the ion fluence. The bonding configuration of free carbon precipitates embedded in amorphous SiC which are formed in PCS after irradiation with C ions or combined treatments (irradiation and subsequent annealing) is close to either to that in diamond-like films or in silicidated graphite, respectively. |
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