Spatial distribution of defects in ion-implanted and annealed Si: The RP/2 effect |
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| Affiliation: | 1. Department of Breast and Endocrine Surgery, Graduate School of Medicine, Osaka University, 2-2-E-10 Yamadaoka, Suita City, Osaka 565-0871, Japan;2. Department of Pathology, Graduate School of Medicine, Osaka University, 2-2 Yamadaoka, Suita City, Osaka 565-0871, Japan;3. Department of Bioinformatic Engineering, Graduate School of Information Science and Technology, Osaka University, 1-5 Yamadaoka, Suita City, Osaka 565-0871, Japan;4. Department of Diagnostic Pathology and Cytology, Osaka International Cancer Institute, 3-1-69 Otemae, Chuo-ku, Osaka City, Osaka 541-8567, Japan;5. Hyogo Prefectural Nishinomiya Hospital, 13–9 Rokutanji-cho, Nishinomiya City, Hyogo 662-0918, Japan |
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| Abstract: | Gettering of metal impurities in ion-implanted Si occurs midway between the surface and the projected ion range, RP, after annealing at temperatures in the range of 700–1000°C and vanishes at higher temperatures. This phenomenon, called the RP/2 effect, seems to be a common feature of ion-implanted and annealed Si. The gettering ability of the damage at RP/2 is commensurate with or may exceed that of the damage at RP. The defects around RP/2 acting as gettering sites have not yet been identified by other analysis techniques. They are formed after ion implantation in the process of defect evolution during annealing and, probably, consist of small complexes of intrinsic defects (vacancies or/and self-interstitials). |
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