Effects of environment on annealing behavior of In+ implanted c-axis sapphire |
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| Affiliation: | 1. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal;2. Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, Zurich, Switzerland;3. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany;4. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany;1. Nuclear Physics Institute of the Academy of Sciences of the Czech Republic, v. v. i., 250 68 Rez, Czech Republic;2. Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem, Czech Republic;3. Department of Inorganic Chemistry, Institute of Chemical Technology, 166 28 Prague, Czech Republic;4. Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany;5. Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany;6. Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden-Rossendorf, 01328 Dresden, Germany |
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| Abstract: | Single crystal samples of 〈0001〉α-Al2O3 were implanted with 360 keV indium ions of doses of 1 × 1016 and 3 × 1016 ions/cm2, at room temperature (RT). The implanted samples were annealed isothermally in air or in flowing high purity argon ambient at 900°C for 2 or 12 h. The damage and thermal annealing were evaluated using Rutherford Backscattering Spectrometry and Channeling (RBS-C) and X-ray Diffraction (XRD). Amorphization of sapphire was not observed, despite damage energy densities up to 105 dpa (displacements per atom obtained from TRIM code calculation) for the Al sublattice, which indicated that self-annealing was severe during In ion implantation of sapphire at RT. RBS-C measurement revealed differences in the annealing characteristics of the implanted indium ions that depended on the annealing environment. The XRD spectrum indicated the presence of the In2O3 phase in the subsurface region of the sample after annealing in air. |
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