Device operation of polymer light-emitting diodes |
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| Affiliation: | 1. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany;2. Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland;3. Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, Poland;4. Institute of Organic Chemistry, Polish Academy of Science, Kasprzaka 44/52, 01-224 Warsaw, Poland;1. Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics, Northwestern Polytechnical University, Xi’an 710072, China;2. Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China;3. State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;1. Organic Semiconductor Centre, SUPA School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews KY16 9SS, UK;2. WestCHEM, School of Chemistry, University of Glasgow, Joseph Black Building, University Avenue, Glasgow G12 8QQ, UK;3. School of Biology, Biomedical Science Research Complex, University of St Andrews, North Haugh, St Andrews KY16 9ST, UK;4. Institute of Physical-Organic Chemistry and Coal Chemistry, Kyiv 02160, Ukraine |
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| Abstract: | Easy processing and mechanical flexibility make polymer light-emitting diodes (PLEDs) suitable candidates for large-area display applications. The understanding of the device properties of PLEDs is a key ingredient for further optimization. This article reviews a device model developed at Philips Research that describes the current and light generation of PLEDs as a function of applied voltage. The model is based on experiments carried out on poly(dialkoxy-p-phenylene vinylene) devices. The combination of the experimental results and model calculations have revealed that (1) the hole current is dominated by space-charge effects and a field-dependent mobility, (2) the electron current is strongly reduced by traps, and (3) the recombination process between the injected electrons and holes is of the Langevin-type. These results explain specific device properties of PLEDs such as a bias-dependent and temperature-independent electroluminescence efficiency (photon/carrier) and indicate directions for further improvement of the device performance. |
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