Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling |
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| Affiliation: | 1. School of Physics, University of Hyderabad, Central University P.O., Hyderabad – 500 046, India;2. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India;3. Solid State Electronics Laboratory, Tata Institute of Fundamental Research, Colaba, Mumbai – 400 005, India;1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China;2. Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia;1. Division of Applied Life Science (BK21 Plus) Gyeongsang National University, Jinju 52828, Republic of Korea;2. Institute of Agriculture and Life Science, Gyeongsang National University, Jinju 52828, Republic of Korea;3. Paddy Crop Research Division, Department of Southern Area Crop Science, National Institute of Crop Science, Rural Development Administration, Miryang 50424, Republic of Korea;1. Department of Food Economics and Food Policy, University of Kiel, Germany;2. International Center for Agricultural Research in the Dry Areas (ICARDA), Cairo, Egypt;3. Amhara Region Agricultural Research Institute, Bahir Dar, Ethiopia;1. KU-Green Catalysts Group, Department of Chemical Engineering, Faculty of Engineering, Kasetsart University, Bangkok 10900, Thailand;2. Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand;3. Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Rayong 21210, Thailand;4. NANOTEC Center for Nanoscale Materials Design for Green Nanotechnology, Kasetsart University, Bangkok 10900, Thailand;5. Center for Advanced Studies in Nanotechnology and its Applications in Chemical, Food and Agricultural Industries, Kasetsart University, Bangkok 10900, Thailand |
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| Abstract: | Organometallic Vapor Phase Epitaxy (OMVPE) grown layered structures of In0.1Ga0.9As/GaAs have been analyzed by He++ ion backscattering and channeling. From the random spectrum, the InxGa1 − xAs layer thickness was determined to be around 300 Å and the composition of In to be In0.1 within an experimental error of around 5%. The χmin obtained from the In signal is around 7% which shows that the epilayer is of good crystallinity. The normalized yield vs. the tilt angle for the epilayer and the substrate along the off-axis (along [1 1 0] direction of the substrate) shows a shift in the minimum yield χmin dip, which is a direct measure of the strain present. This shift is found to be 0.2 ± 0.05° corresponding to a tetragonal distortion of 0.7 ± 0.2%. Shifting of the minimum yield dip of the overlayer towards left side with respect to the substrate indicates that the strain is compressive which is what is expected. X-ray diffraction is also carried out on the same sample which gives us ϵ⊥=1.01% and the in-plane lattice mismatch is nearly zero. |
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