(p,p) non-Rutherford backscattering analysis of silicon carbide |
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| Affiliation: | 1. CFNUL, University of Lisbon, Av. Prof. Gama Pinto, 2 Lisbon, Portugal;2. INESC, Rua Alves Redol 9, 1000 Lisbon, Portugal;1. Dipartimento di Matematica e Informatica, Università degli Studi di Perugia, Via Vanvitelli 1, 06123 Perugia, Italy;2. Departamento de Matemática, Universidade Estadual de Campinas, IMECC Rua Sérgio Buarque de Holanda, 651, Campinas, SP CEP 13083–859, Brazil |
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| Abstract: | In this paper, (p,p) non-Rutherford elastic backscattering (NBS) measurements with 1.6 MeV proton beams have been used to determine the areal density and C/Si stoichiometric ratio in 300–1000 nm SiCx(Hy) films deposited on silicon substrates by Chemical Vapour Deposition (CVD) using two different gas sources, methane (CH4) and ethylene (C2H4). At the same time, oxygen is also found in some of these samples. The results show that (p,p) NBS can be used to determine the areal density and C/Si ratio with a reasonable accuracy, especially when samples are thick or the terminal energy of the accelerator is low for analysis using a helium beam. |
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