High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD |
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| Affiliation: | 1. ANELVA Corporation, 5-8-1 Yotsuya, Fuchu-shi, Tokyo, 183-8508 Japan.;2. Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa, 216-8555 Japan.;1. Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Université de Gabes, cité Erriadh, 6079 Gabès, Tunisia;2. Laboratoire Microélectronique Appliqué, Faculté des Sciences de l’Ingénieur - Université Djilali Liabes, Université de Sidi Bel Abbes, Algeria;1. Electronics Telecommunication and Computer Department ISEL, Lisboa, Portugal;2. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal;1. School of Energy Science and Engineering, Central South University, Changsha, 410083, China;2. Hunan Red Solar Photoelectricity Science and Technology Co., Ltd, Changsha, 410083, China;1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea;2. Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA;3. Plasma Research Laboratory, School of Physical Sciences, Dublin City University, Dublin 9, Ireland;4. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea;1. Shanghai Jiao Tong University, School of Mechanical Engineering, 800 Dong Chuan Rd., Shanghai 200240, PR China;2. Shanghai University, School of Mechatronic Engineering and Automation, Shanghai 200072, PR China;1. School of Energy Science and Engineering, Central South University, Changsha 410083, China;2. Hunan Red Solar Photoelectricity Science and Technology Co., Ltd, Changsha 410005, China;3. Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542. China |
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| Abstract: | Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiNx:H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the deposition rate and the film quality of both films has been investigated. The films were prepared by VHF (30 MHz∼50 MHz) and HF (13.56 MHz) plasma enhanced CVD.High deposition rates were achieved in the low pressure region for both a-Si:H and a-SiNx:H depositions by the use of VHF plasma. The maximum deposition rates were 180 nm/min for a-Si:H at 50 MHz and 340 nm/min for a-SiNx:H at 40 MHz. For a-SiNx:H films deposited in VHF plasma, the optical bandgap, the hydrogen content and the Si–H]/N–H] ratio remain almost constant regardless of an increase in deposition rate. The increase of film stress could be limited to a lower value even at a high deposition rate. The TFTs fabricated with VHF PECVD a-Si:H and a-SiNx:H films showed applicable field effect mobility. It is concluded that VHF plasma is useful for high rate deposition of a-Si:H and a-SiNx:H films for TFT LCD application. |
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