| 一种10-ppm/~oC低压CMOS带隙电压基准源设计 |
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| 引用本文： | 朱樟明,杨银堂.一种10-ppm/~oC低压CMOS带隙电压基准源设计[J].电路与系统学报,2004(4). |
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| 作者姓名： | 朱樟明 杨银堂 |
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| 作者单位： | 西安电子科技大学微电子研究所 陕西西安710071
(朱樟明)，西安电子科技大学微电子研究所 陕西西安710071(杨银堂) |
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| 基金项目： | 国家高技术研究发展863计划资助项目(2002AA1Z1210) |
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| 摘 要： | 在对传统CMOS带隙电压基准源电路分析和总结的基础上,综合一级温度补偿、电流反馈和电阻二次分压技术,提出了一种10-ppm/oC低压CMOS带隙电压基准源。采用差分放大器作为基准源的负反馈运放,简化了电路的设计,放大器的输出用于产生自身的电流源偏置,提高了电源抑制比(PSRR)。整个电路采用TSMC 0.35mm CMOS工艺实现,采用Hspice进行仿真,仿真结果证明了基准源具有低温度系数和高电源抑制比。
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| 关 键 词： | CMOS 带隙电压基准源 低压 温度系数 电源抑制比 |
A 10-ppm/~oC Low Voltage CMOS Band-gap Voltage Reference |
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| ZHU Zhang-ming,YANG Yin-tang.A 10-ppm/~oC Low Voltage CMOS Band-gap Voltage Reference[J].Journal of Circuits and Systems,2004(4). |
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| Authors: | ZHU Zhang-ming YANG Yin-tang |
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| Abstract: | The design of a 10-ppm/oC CMOS band-gap voltage reference with low power supply voltage in temperature compensation, current compensation and resistive subdivision technology is described. The amplifier for band-gap reference minus-feedback application is one stage differential amplifier. The biasing of the amplifier is derived from the output voltage, leading to a high power supply rejection (PSRR). The band-gap references is implemented in a standard 0.35m CMOS process leading to an output voltage of about 780mV. Simulation results using Hspice tools show that the low temperature coefficient and high PSRR of the proposed band-gap reference are ensured. |
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| Keywords: | CMOS band-gap voltage reference low voltage temperature coefficient PSRR |
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