Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemical vapour deposition |
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| Authors: | Tatebayashi J. Hatori N. Kakuma H. Ebe H. Sudo H. Kuramata A. Nakata Y. Sugawara M. Arakawa Y. |
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| Affiliation: | Nanoelectronics Collaborative Res. Center, Univ. of Tokyo, Japan; |
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| Abstract: | Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers grown by metal organic chemical vapour deposition is reported. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) was achieved at the wavelength of 1.18 /spl mu/m. The threshold current of 6.7 mA is the lowest value so far achieved in quantum dot lasers grown by metal organic chemical vapour deposition. Comparison with photoluminescence spectra indicates that the observed lasing originates from the ground state of InAs quantum dots. |
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