Memory effect in a junction-like CdS nanocomposite/conducting polymer poly[2-methoxy-5-(2-ethylhexyloxy)1,4-phenylene-vinylene] heterostructure

The operation of a nonvolatile memory device is demonstrated using junction-like CdS nanocomposites embedded in a polymer matrix. The capacitance-voltage characteristics of Al/conducting polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene]/CdS nanocomposites in a polyvinyl alcohol matrix/indium tin oxide device exhibit hysteresis, which is attributed to the trapping, storage, and emission of holes in the quantized valence band energy levels of isolated CdS nanoneedles. The characteristics at different operating frequencies show that the hysteresis is due to trapping of charge carriers in CdS nanocomposites rather than in the interfacial states. The memory behavior in the inorganic/organic heterostructure is explained on the basis of a simple energy band diagram.