Electrical properties of ZnSe-CdS alloy films

Thin films of ZnSe_xCdS_1–x (t 0.6 m) over the entire range of x, were deposited on glass substrates at two temperatures, T_s (350 and 470 K) by vacuum evaporation. X-ray diffraction studies showed that all the films were polycrystalline in nature. Films prepared at 470 K were nearly stoichiometric. Grain size increased with substrate temperature, T_s. The electrical conductivity and Hall measurements were carried out by d.c. van der Pauw technique. Hall effect studies/hot probe test showed that all the films were of n-type conductivity. Hall mobility increased with T_s. In addition, mobilities increased with temperature in films of all compositions, indicating the dominance of grain-boundary scattering. Grain-boundary potentials were in range 0.03–0.06 eV.