Electrical properties of ZnSe-CdS alloy films |
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Authors: | R. Venugopal R. P. Vijayalakshmi D. R. Reddy B. K. Reddy |
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Affiliation: | (1) Department of Physics, S.V. University, 517502 Tirupati, India |
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Abstract: | Thin films of ZnSexCdS1–x (t 0.6 m) over the entire range of x, were deposited on glass substrates at two temperatures, Ts (350 and 470 K) by vacuum evaporation. X-ray diffraction studies showed that all the films were polycrystalline in nature. Films prepared at 470 K were nearly stoichiometric. Grain size increased with substrate temperature, Ts. The electrical conductivity and Hall measurements were carried out by d.c. van der Pauw technique. Hall effect studies/hot probe test showed that all the films were of n-type conductivity. Hall mobility increased with Ts. In addition, mobilities increased with temperature in films of all compositions, indicating the dominance of grain-boundary scattering. Grain-boundary potentials were in range 0.03–0.06 eV. |
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