Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures |
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Authors: | G. B. Galiev R. M. Imamov B. K. Medvedev V. G. Mokerov É. Kh. Mukhamedzhanov É. M. Pashaev V. B. Cheglakov |
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Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 103907 Moscow, Russia |
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Abstract: | The results of an investigation of the structural perfection of GaAs epitaxial films grown by molecular-beam epitaxy at low growth temperatures (240–300 °C) and various As/Ga flux ratios (from 3 to 13) are presented. Diffraction reflection curves display characteristic features for the samples before and after annealing in the temperature range from 300 to 800 °C. Hypotheses which account for these features are advanced. The range of variation of the arsenic/gallium flux ratio, in which low-temperature growth takes place under nearly stoichiometric conditions, is established. Fiz. Tekh. Poluprovodn. 31, 1168–1170 (October 1997) |
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