Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

Authors:	M.?D.?Kim,T.?W.?Kim author-information" > author-information__contact u-icon-before" > mailto:twk@hanyang.ac.kr" title=" twk@hanyang.ac.kr" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author

Affiliation:	(1) Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon, 305-764, Korea;(2) Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea

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