| ZnO/Ag/ZnO多层膜的制备和性质研究 |
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| 引用本文： | 李俊,闫金良,杨春秀,李科伟,于芬. ZnO/Ag/ZnO多层膜的制备和性质研究[J]. 电子元件与材料, 2007, 26(3): 52-54 |
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| 作者姓名： | 李俊 闫金良 杨春秀 李科伟 于芬 |
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| 作者单位： | 鲁东大学物理与电子工程学院,山东,烟台,264025;鲁东大学物理与电子工程学院,山东,烟台,264025;鲁东大学物理与电子工程学院,山东,烟台,264025;鲁东大学物理与电子工程学院,山东,烟台,264025;鲁东大学物理与电子工程学院,山东,烟台,264025 |
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| 摘 要： | 采用射频磁控溅射ZnO陶瓷靶和直流磁控溅射Ag靶的方法制备了ZnO/Ag/ZnO多层膜。用X射线衍射仪、紫外–可见分光光度计、四探针测试仪和金相显微镜对ZnO/Ag/ZnO薄膜的结构、光学透过率、方阻和稳定性进行了研究。结果表明,ZnO(60nm)/Ag/(10nm)/ZnO(60nm)薄膜呈现多晶结构,薄膜在520nm处的光学透过率高达87.5%,方阻Rs为6.2Ω/□。随着顶层ZnO薄膜厚度的增加,ZnO/Ag/ZnO薄膜的稳定性提高。
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| 关 键 词： | 半导体技术 透明导电膜 多层膜 光学性质 电学性质 |
| 文章编号： | 1001-2028（2007）03-0052-03 |
| 修稿时间： | 2006-11-06 |
Preparation and property of ZnO/Ag/ZnO multilayer films |
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| LI Jun,YAN Jin-liang,YANG Chun-xiu,LI Ke-wei,YU Fen. Preparation and property of ZnO/Ag/ZnO multilayer films[J]. Electronic Components & Materials, 2007, 26(3): 52-54 |
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| Authors: | LI Jun YAN Jin-liang YANG Chun-xiu LI Ke-wei YU Fen |
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| Affiliation: | School of Physics and Electronic Engineering, Ludong University, Yantai 264025, China |
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| Abstract: | ZnO/Ag/ZnO multilayer films were prepared by alternate RF magnetron sputtering of ZnO targets and DC magnetron sputtering of Ag targets. The structure, transmittance, sheet resistance and stability of ZnO/Ag/ZnO thin films were measured by X-ray diffractometers, UV-visible spectrophotometers, four-point probes and metalloscopy. The results show that the ZnO(60 nm)/Ag/(10 nm)/ZnO(60 nm) thin films have good polycrystallinity, a high optical transmittance of 87.5 % at 520 nm and sheet resistance of 6.2 Ω/□. The stability of ZnO/Ag/ZnO thin films is improved with the increase of upper ZnO thin film thickness. |
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| Keywords: | semiconductor transparent conducting films multilayer films optical properties electrical properties |
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