| Ag／La0.67Sr0.33MnO3/Pt异质结构的电阻开关特性 |
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| 引用本文： | 曲炳郡,黄丽娜,刘理天. Ag／La0.67Sr0.33MnO3/Pt异质结构的电阻开关特性[J]. 纳米技术与精密工程, 2009, 7(2): 178-181 |
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| 作者姓名： | 曲炳郡 黄丽娜 刘理天 |
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| 作者单位： | 清华大学微电子研究所,北京,100084 |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划) |
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| 摘 要： | 采用脉冲激光沉积技术在Pt／Ti／SiO2／Si（100）衬底上制备出多晶La0.67Sr0.33MnO3（LSMO）薄膜，对其电脉冲致非挥发可逆电阻开关特性进行研究．结果表明，Ag/LSMO／Pt结构具有明显的室温电脉冲诱发电阻开关特性，且在宽电压脉冲作用下表现出较低的开关电压和较快的变阻饱和速度．由此可见，总脉冲能量或电荷（电流作用）为该结构的电阻开关效应提供驱动力．对Ag／LsMO／Pt结构进行了耐久性测试，表明该结构具有良好的疲劳特性与保持特性，可应用于新型不挥发存储器、传感器及可变电阻等电子元器件的研制
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| 关 键 词： | La0.67Sr0.33MnO3 脉冲激光沉秘 电阻开关 电阻随机存取存储器 |
Resistive Switching Behavior of Ag/La_(0.67)Sr_(0.33)MnO_3/Pt Heterostructures |
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| Q Bing-jun,HUANG Li-na,LIU Li-tian. Resistive Switching Behavior of Ag/La_(0.67)Sr_(0.33)MnO_3/Pt Heterostructures[J]. Nanotechnology and Precision Engineering, 2009, 7(2): 178-181 |
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| Authors: | Q Bing-jun HUANG Li-na LIU Li-tian |
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| Affiliation: | Institute of Microelectronics;Tsinghua University;Beijing 100084;China |
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| Abstract: | Nonvolatile and reversible resistive switching of polycrystalline La0.67Sr0.33MnO3 (LSMO) thin films deposited on Pt/Ti/SiO2/Si (100) substrates by a pulsed laser deposition (PLD) process was investigated using voltage pulses with current compliance. Clear resistive switching cycles were observed in the Ag/LSMO/Pt sample at room temperature, with lower switching voltages and higher saturation speed under pulses of longer duration, indicating that the total energy added to the device, or the total charge (th... |
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| Keywords: | La0.67Sr0.33MnO3 La0.67Sr0.33MnO3 pulsed laser deposition (PLD) resistive switching resistance random access memory (RRAM) |
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