Oxidation kinetics of boron carbide ceramic under high gamma irradiation dose in the high temperature |
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| Affiliation: | 1. Institute for Superhard Materials of the National Academy of Sciences of Ukraine, 2, Avtozavodskaya Street, Kiev 04074, Ukraine;2. Institute for Problems in Material Science, NAS Ukraine, 3 Krzhizhanovsky Str., 03680 Kiev, Ukraine;3. Scientific and technical center "Composite Materials", Institute for Problems in Material Sciences of the National Academy of Sciences of Ukraine, 17-A, General Naumov Str., 03164 Kyiv, Ukraine;4. Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, United States;5. State Research Institute of the Ministry of Internal Affairs of Ukraine, 4a, Y. Gutsala Lane, Ua-01011 Kyiv, Ukraine;1. Center of Functional Nano-Ceramics, National University of Science and Technology MISiS, Moscow 119049, Russia;2. Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;1. Joint Institute for Nuclear Research, Dubna, Moscow Distr., 141980, Russia;2. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, АZ1143, Azerbaijan;3. Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, Sofia, 1784, Bulgaria;4. Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, 1784, Bulgaria;5. Yeditepe University, Physics Department, Istanbul, 34755, Turkey;6. Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Tashkent, 100214, Uzbekistan;7. The Institute of Nuclear Physics, 050032, Almaty, Kazakhstan;8. Institute of Physics, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Viet Nam;9. Department of Physics, Busitema University, P.O. Box 236, Tororo, Uganda;10. Faculty of Chemistry, Nicolaus Copernicus University, ul. Gagarina 7, 87-100 Toruń, Poland |
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| Abstract: | In the presented work, high purity boron carbide (purity of 99.9%, and bulk density 1.8 g/cm3 at 20 °C) compounds were gamma-irradiated at dose rate of D = 30 rd/sec using Co60 gamma source. The irradiation of the samples at different gamma doses (5·109; 1·1010; 1.5·1010 and 2·1010 Mrd) was carried out at room temperature and atmospheric pressure. The Differential Scanning Calorimetry (DSC) was used to study the solvothermal chemical reaction mechanisms of boron carbide from room temperature up to 900 K and the oxidation kinetics, rate of oxidation diffusion (plots of Jander), depth of oxidation and activation energy from 900 ≤ T ≤ 1250 K after gamma irradiation at different gamma absorption doses. The depth of the gamma irradiation dose on the surface determined the “critical limit” for the thin oxide layer for boron carbide. Also, depths of gamma irradiation dose is calculated activation energy by the Arrhenius plots. The activation energy was found to increase from 99.59 J mol−1 to 102.93 J mol−1 as the gamma irradiation dose increased from 5·109 to 2·1010 Mrad. |
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| Keywords: | Boron carbide Gamma absorption dose Oxidation kinetics Activation energy Depth of oxidation High temperature |
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