A noticeable effect of Pr doping on key optoelectrical properties of CdS thin films prepared using spray pyrolysis technique for high-performance photodetector applications |
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| Affiliation: | 5. Central Laboratory, College of Science & Department of Zoology, King Saud University, Riyadh, 11451, Saudi Arabia;1. Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur, 413512, Maharashtra, India;2. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia;1. Institute for Energy Research, Jiangsu University, Zhenjiang 212013, PR China;2. Department of Material Science, Fudan University, Shanghai 200433, PR China;1. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O Box-9004, Abha, 61413, Saudi Arabia;2. Department of Physics and Electronics, Maulana Azad College of Arts, Science and Commerce, Aurangabad, 431001, Maharashtra, India;3. Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur, 413512 Maharashtra, India;1. Department of Physics, Ananda College, Devakottai, 630303, India;2. PG and Research Department of Physics, Arul Anandar College, Madurai, 625514, India;3. Department of Physics, Institute of Aeronautical Engineering, Dundigal, Hyderabad, 500043, India;4. Department of Physics, School of Advanced Sciences, Kalasalingam Academy of Research and Education, Krishnankoil, 626 126, India;5. Department of Physics, Rajah Serfoji Government College (Autonomous), Thanjavur, 613 005, Tamil Nadu, India;6. Research Center for Advanced Materials Science(RCAMS), King Khalid University, Abha 61413, PO Box 9004, Saudi Arabia;7. Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, Abha 61413, Saudi Arabia;8. Physics Department, Faculty of Science, Zagazig University, 44519 Zagazig, Egypt;1. School of Electronic Engineering, Nanjing Xiaozhuang University, Nanjing, 211171 China;2. College of Physics and Electronic Engineering, Jiangsu Second Normal University, Nanjing, 210013 China;3. Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | High-quality thin film-based photodetectors containing praseodymium doped cadmium sulfide (Pr:CdS) were fabricated through spray pyrolysis and studied for various opto-electrical applications. Field emission electron microscopy (FE-SEM) revealed that the prepared films were highly compacted with an extremely fine nanostructure without any pinhole or crack. X-ray diffraction and FT-Raman spectroscopy studies confirmed the single hexagonal phase of all the films. The crystallite size was found to lie between 19 and 32 nm. Optical spectroscopy revealed that the fabricated films have low absorbance and high transmittance (in range of 70–80%). The energy gap was found to lie in the range of 2.40–2.44 eV. The PL spectra contained an intense green emission band at ~531 ± 5 nm (2.33 eV), and its intensity was enhanced by increasing the Pr doping content in CdS. The dark and photo currents of CdS increased by approximately 950 and 42 times, respectively with the addition of 5.0 wt% Pr. The responsivity (R) and specific detectivity (D*) were remarkably enhanced to 2.71 AW-1 and 6.9 × 1011 Jones, respectively, for the 5.0 wt% Pr:CdS film. The external quantum efficiency (EQE) of 5 wt% Pr:CdS films was 43 times that of pure CdS films, and the on/off ratio was 3.95 × 102 for 5.0 wt% Pr:CdS film. Its high R, D*, and EQE values, and photo-switching behavior make Pr:CdS a good contender for high quality photodetector applications. |
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| Keywords: | CdS and Pr CdS films Opto-electrical properties Responsivity External quantum efficiency Detectivity |
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