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| 掺砷碲镉汞的光致发光光谱和电学性质 | |
| 引用本文： | 张小华,陈路,林铁,何力,郭少令,褚君浩.掺砷碲镉汞的光致发光光谱和电学性质[J].红外与毫米波学报,2012,31(5):407-410. |
| 作者姓名： | 张小华 陈路 林铁 何力 郭少令 褚君浩 |
| 作者单位： | 1. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083 2. 中国科学院上海技术物理研究所材料器件国防实验室,上海,200083 3. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;华东师范大学ECNU-SITP联合实验室,上海200062 |
| 基金项目： | 国家重点基础研究发展计划（973计划）;国家自然科学基金项目（面上项目，重点项目，重大项目） |
| 摘 要： | 碲镉汞的电学性能和光学性能直接决定探测器性能.对窄禁带掺砷碲镉汞进行了11 ～ 300 K的红外光致发光光谱和变温霍尔测量.对变温光致发光光谱进行了拟合分析,结果表明经通用的两步退火,样品不仅存在砷占碲位(AsTe)、汞空位(VHg)和TeHg-VHg对,还存在碲反位(TeHg).掺杂浓度越大,退火产生的TeHg-VHg对越多.变温霍尔分析进一步证明通用的两步退火后材料中存在TeHg,TeHg留在材料中使迁移率减小. |
| 关 键 词： | 碲镉汞 光致发光 载流子浓度 |
| 收稿时间： | 2011/10/21 |
| 修稿时间： | 2011/12/9 0:00:00 |
Photoluminescence and electrical characteristics of arsenic-doped HgCdTe |
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| ZHANG Xiao-Hu,CHEN Lu,LIN Tie,HE Li,GUO Shao-Ling and CHU Jun-Hao.Photoluminescence and electrical characteristics of arsenic-doped HgCdTe[J].Journal of Infrared and Millimeter Waves,2012,31(5):407-410. | |
| Authors: | ZHANG Xiao-Hu CHEN Lu LIN Tie HE Li GUO Shao-Ling and CHU Jun-Hao |
| Affiliation: | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,,Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,ECNU-SITP Joint Laboratory for Image Information, East China Normal University,Shanghai |
| Abstract: | Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that AsTe、 VHg、 TeHg-VHg and TeHg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More TeHg-VHg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of TeHg, which lowers the mobility of the material. |
| Keywords: | HgCdTe photoluminescence carrier concentration |
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