2DEG base hot electron transistors fabricated using MBE and in situion beam lithography |
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| Authors: | Ingram S.G. Linfield E.H. Brown K.M. Jones G.A.C. Ritchie D.A. Kelly M.J. |
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| Affiliation: | Hirst Res. Centre, GEC Marconi Ltd., Borehamwood ; |
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| Abstract: | A vertical hot electron transistor incorporating a two-dimensional electron gas (2DEG) base has been fabricated in the GaAs-AlGaAs materials system. The difficulties caused by the need to form selective ohmic contacts to the different conducting layers have been overcome using a combination of in situ focused ion beam (FIB) isolation and molecular beam epitaxial (MBE) regrowth. This has allowed a high yield of working devices to be achieved with a typical common emitter current gain of hFE=6 at low temperatures |
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