| SnAgCu-Bi-Ni无铅微焊点的电迁移行为 |
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| 引用本文： | 孙凤莲,王家兵,刘洋,王国军. SnAgCu-Bi-Ni无铅微焊点的电迁移行为[J]. 哈尔滨理工大学学报, 2012, 17(3): 1-4 |
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| 作者姓名： | 孙凤莲 王家兵 刘洋 王国军 |
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| 作者单位： | 1. 哈尔滨理工大学材料科学与工程学院,黑龙江哈尔滨,150040
2. 东北轻合金有限公司,黑龙江哈尔滨,150060 |
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| 基金项目： | 国家自然科学基金，黑龙江省自然科学基金重点项目 |
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| 摘 要： | 以直径为400μm的SnAgCu-Bi-Ni(Ag<1%)微焊点为对象,研究了微焊点在电流时效过程中的电迁移行为.对球栅阵列(ball grid array,BGA)焊点组装电路在不同温度下进行不同时长的电流时效试验.从焊点微观组织和硬度梯度的变化两个方面分析了电迁移现象的行为规律.研究结果表明,电迁移试验后焊点阴极区域金属间化合物(intermetallic compound,IMC)分解,附近形成大量微空洞,Cu焊盘大量消耗,焊点中部和阳极形成了大量(Cu,Ni,)6Sn5化合物,附近形成大量小丘,电迁移作用导致焊点内部微硬度形成由阳极向阴极递减的梯度分布,较高的试验温度显著加快电迁移进程.
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| 关 键 词： | 低银 无铅钎料 电迁移 纳米压痕 金属间化合物 |
Electromigration of SnAgCu-Bi-Ni Pb-free Micro Solder Joints |
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| SUN Feng-lian , WANG Jia-bing , LIU Yang , WANG Guo-jun. Electromigration of SnAgCu-Bi-Ni Pb-free Micro Solder Joints[J]. Journal of Harbin University of Science and Technology, 2012, 17(3): 1-4 |
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| Authors: | SUN Feng-lian WANG Jia-bing LIU Yang WANG Guo-jun |
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| Affiliation: | 1.School of Material Science and Engineering,University of Science and Technology,Harbin 150040,China; 2.Northeast Light Alloy Co.,Ltd.,Harbin 150060,China) |
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| Abstract: | In this paper,the electromigration behavior of 400μm sized solder interconnects(SnAgCu-Bi-Ni,Ag<1%) was investigated.Current stressing tests were conducted with assembled BGA package at different temperatures for different periods.The microstructure evoluation at the interface and hardness gradient distribution inside older bulk were studied.The results indicated that after the electromigration test,the intermetallic compounds(IMC) disappeared and a large number of micro voids appeared closeto cathode area where the copper were consumed obviously.A large amount of(Cu,Ni)6Sn5 IMC and hillocks were observed at the anode.With current stressing,the hardness of solder joint increased from cathode to anode.High aging temperature increases electromigration behavior significantly. |
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| Keywords: | low-Ag Pb-free electromigration nanoindentation IMC |
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