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Ni segregation in the interfacial (Cu,Ni)6Sn5 intermetallic layer of Sn-0.7Cu-0.05Ni/Cu ball grid array (BGA) joints
Affiliation:1. Nihon Superior Centre for the Manufacture of Electronic Materials (NS CMEM), School of Mechanical and Mining Engineering, The University of Queensland (UQ), Brisbane, QLD 4072, Australia;2. The Ultramicroscopy Research Center, Kyushu University, Fukuoka 819-0395, Japan;3. Centre of Excellence Geopolymer and Green Technology, School of Materials Engineering, Universiti Malaysia Perlis (UniMAP), Taman Muhibbah, 02600 Jejawi, Arau, Perlis, Malaysia
Abstract:Ni segregation in the interfacial (Cu,Ni)6Sn5 intermetallic layer of Sn-0.7Cu-0.05Ni/Cu BGA solder joints was investigated by using synchrotron micro X-ray fluorescence (XRF) analysis and synchrotron X-ray diffraction (XRD). Compared to Sn-0.7Cu/Cu BGA joints, Ni containing solder show suppressed Cu3Sn growth in both reflow and annealed conditions. In as-reflowed Sn-0.7Cu-0.05Ni/Cu BGA joints, Ni was relatively homogenously distributed within interfacial (Cu,Ni)6Sn5. During subsequent annealing, the diffusion of Ni in Cu6Sn5 was limited and it remained concentrated adjacent the Cu substrate where it contributes to the suppression of Cu3Sn formation at the interface between the Cu substrate and Cu6Sn5 intermetallics.
Keywords:D  Interfaces  D  Segregation  F  Trace element analysis
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