Enhanced photovoltaic performance of inverted organic solar cells with In-doped ZnO as an electron extraction layer |
| |
| Affiliation: | 1. Department of Electrical and Computer Engineering, Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul 151-744, Republic of Korea;2. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India;3. Department of Engineering, University College of Bergen, Bergen, Norway;1. GECAD, Knowledge Engineering and Decision Support Research Center, Polytechnic of Porto (IPP), R. Dr. António Bernardino de Almeida, 431, 4200-072 Porto, Portugal;2. Automation and Control Group, Technical University of Denmark (DTU), Elektrovej Build. 326, DK 2800 Kgs. Lyngby, Denmark;1. University of Alaska Anchorage, Anchorage, AK, USA;2. Mechanical Engineering Dept., Ohio University, Athens, OH, USA;3. Civil Engineering Dept., University of Alaska Anchorage, Anchorage, AK, USA;4. Electrical Engineering Dept., University of Alaska Anchorage, Anchorage, AK, USA;5. Mechanical Engineering Dept., University of Alaska Anchorage, Anchorage, AK, USA;1. UR: Micro Electro Thermal Systems-ENIS, IPEIS, University of Sfax, B.P: 1172-3018 Sfax, Tunisia;2. LASMAP, Polytechnic Engineering School of Tunis, University of Carthage, La Marsa, Tunis, Tunisia;1. College of Mechanical Engineering, Chongqing University, Chongqing 400044, China;2. College of Economics and Management, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;3. Weichai Power Co., Ltd., WeiFang 261041, China |
| |
| Abstract: | In the present work, a systematic study has been carried out to understand the effect of In doping on the various properties of the ZnO nanocrystalline thin films. In-doped ZnO nanocrystalline thin films with different indium concentrations (1.98%, 4.03%, 6.74%, 8.62% and 10.48% In) have been synthesized by sol–gel method. The grain size and surface roughness of the In-doped ZnO thin films are observed to be smaller than those of the ZnO thin films. 6.74% In-doped ZnO films with a low resistivity of 1.95 × 10?3 Ω cm and a high mobility of 2.19 cm2 V?1 S?1 have been prepared under optimal deposition conditions. Inverted organic solar cells containing In-doped ZnO as an electron extraction layer with the structure indium tin oxide (ITO)/In-doped ZnO/polyN-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT): 6,6]-phenyl C71-butyric acid methyl ester (PC71BM)/MoO3/Al have been fabricated. The inverted organic solar cell with 6.74% In-doped ZnO exhibited a power conversion efficiency of 5.58%, which is the best efficiency reported so far for these type of solar cells. The device performance has been optimized by varying the indium doping concentration. The results clearly demonstrate that significant improvement in power conversion efficiency can be obtained by incorporating In into the ZnO films. |
| |
| Keywords: | In doping Sol–gel method PCDTBT Inverted organic solar cells |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
