Thermoelectric properties of Indium doped Cu2GeSe3 |
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| Affiliation: | 1. Department of Physics, Indian Institute of Science, Bangalore 560012, India;2. Institute of Physical Chemistry, University of Vienna, Währingerstrasse 42, A-1090 Wien, Austria;3. Department of Materials Science and Engineering, Korea National University of Transportation, 50 Daehangno, Chungju, Chungbuk 380-702, South Korea;1. Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, India;2. Institute of Materials Research, German Aerospace Center (DLR), D-51170 Köln, Germany;3. Justus Liebig University Giessen, Institute of Inorganic and Analytical Chemistry, Heinrich-Buff-Ring 58, D-35392 Giessen, Germany;1. Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada;2. CANMET Materials, Natural Resources Canada, 183 Longwood Road South, Hamilton, Ontario L8P 0A5, Canada;1. Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104, India;2. CSIR-Network of Institute for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012, India;3. Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan |
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| Abstract: | Cu2Ge1?xInxSe3 (x = 0, 0.05, 0.1, 0.15) compounds were prepared by a solid state synthesis. The powder X-ray diffraction pattern of the undoped sample revealed an orthorhombic phase. The increase in doping content led to the appearance of additional peaks related to cubic and tetragonal phases along with the orthorhombic phase. This may be due to the substitutional disorder created by Indium doping. Scanning Electron Microscopy micrographs showed a continuous large grain growth with low porosity, which confirms the compaction of the samples after hot pressing. Elemental composition was measured by Electron Probe Micro Analyzer and confirmed that all the samples are in the stoichiometric ratio. The electrical resistivity (ρ) systematically decreased with an increase in doping content, but increased with the temperature indicating a heavily doped semiconductor behavior. A positive Seebeck coefficient (S) of all samples in the entire temperature range reveal holes as predominant charge carriers. Positive Hall coefficient data for the compounds Cu2InxGe1?xSe3 (x = 0, 0.1) at room temperature (RT) confirm the sign of Seebeck coefficient. The trend of ρ as a function of doping content for the samples Cu2InxGe1?xSe3 with x = 0 and 0.1 agrees with the measured charge carrier density calculated from Hall data. The total thermal conductivity increased with rising doping content, attributed to an increase in carrier thermal conductivity. The thermal conductivity revealed 1/T dependence, which indicates the dominance of Umklapp phonon scattering at elevated temperatures. The maximum thermoelectric figure of merit (ZT) = 0.23 at 723 K was obtained for Cu2In0.1Ge0.9Se3. |
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| Keywords: | B Electrical properties B Thermoelectric properties F Diffraction F Electron microscopy scanning |
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