硅衬底Al2O3∶Tb3+薄膜的制备及其发光性能

采用溶胶凝胶法在硅衬底上制备了Al₂O₃∶Tb³⁺薄膜; 并采用DTA-TG、XRD、SEM、AFM及光致发光光谱对其进行了一系列表征; 分析了Al₂O₃∶Tb³⁺薄膜的发光机理， 探讨了热处理温度和Tb³⁺掺杂浓度对发光性能的影响规律. 研究结果表明, 采用溶胶凝胶法制备工艺, 制备了高发光强度的Al₂O₃∶Tb³⁺薄膜, 薄膜的最佳激发波长为240nm, Tb³⁺的最佳掺杂浓度为5mol%(Tb₂O₃/Al₂O₃=5mol%), 在240nm光激发下, 最强的发射峰出现在544nm附近; 并且制备的Al₂O₃∶Tb³⁺薄膜表面致密、平整且无裂纹产生, 表面粗糙度约为1.3nm, 有利于硅基光电子器件的制备和应用.

Preparation and Photoluminescence Properties of Tb~(3+)-doped Al_2O_3 Films on Silicon Substrates

Tb~(3+)-doped Al_2O_3 films on silicon substrates were prepared by the sol-gel method. The Tb~(3+)-doped Al_2O_3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb~(3+)-doped Al_2O_3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb~(3+)∶Al_2O_3 films were discussed. The results show that the prepared Al_2O_3∶Tb~(3+) film has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb~(3+) dopant is 5mol%, and the main emission is at 544nm under excitation at 240nm. And the prepared Al_2O_3∶Tb~(3+) film has a dense, smooth and crack-free surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.