Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices |
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Authors: | Xiaohui Tang Reckinger N. Bayot V. Krzeminski C. Dubois E. Villaret A. Bensahel D.-C. |
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Affiliation: | Microelectron. Lab, Univ. Catholique de Louvain, Louvain-la-Neuve; |
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Abstract: | Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application |
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