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Electrical anisotropy of α-(BEDT-TTF)2KHg(SCN)4
Authors:M. Arifuku   H. Tajima   M. Tokumoto   N. Kinoshita   T. Ohta  H. Anzai
Abstract:The transverse magnetoresistance of α-(BEDT-TTF)2KHg(SCN)4 was investigated with the magnetic field rotated within a conducting ac-plane. It was found that the magnetic-field-orientation dependence of the magnetoresistance in the weak-field limit, ΔR(B,θ), has the form ΔR(B,θ) = B2(psin2(θ − θmin) + qcos2(θ − θmin), where θ is the angle betweeen a-axis and magnetic field direction and (p, q, θmin) are temperature-dependent parameters. By examining the results based on the classical theory of magnetoresistance, it was concluded that the electrical anisotropy within be-plane is 3.5 4.5 and 2.5 3.0 above and below the phase transition at 10 K, respectively.
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