| GaAlAs／GaAs量子阱LD泵浦Nd：YAG激光器 |
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| 引用本文： | 王晓华 史全林. GaAlAs／GaAs量子阱LD泵浦Nd：YAG激光器[J]. 半导体光电, 1998, 19(6): 407-408 |
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| 作者姓名： | 王晓华 史全林 |
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| 作者单位： | 长春光学精密机械学院 |
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| 摘 要： | 利用分子束外延技术生长出了ＧａＡｌＡｓ／ＧａＡｓ折射率渐变分别限制单量阱材料。用该材料作出的激光二极管作泵浦源对Ｎｄ：ＹＡＧ激光器进行端面泵浦实验，在工作电流为３．３Ａ时，ＬＤ输出功率为２．７Ｗ，得到Ｎｄ：ＹＡＧ激光器的输出功率达７００ｍＷ，光－光转换效率达２０％。
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| 关 键 词： | 激光二极管 量子阱 钕：YAG激光器 |
On GaAlAs/GaAs SQW laser diode pumped Nd:YAG laser |
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| WANG Xiaohua SHI Quanlin WANG Yuxia REN Dacui. On GaAlAs/GaAs SQW laser diode pumped Nd:YAG laser[J]. Semiconductor Optoelectronics, 1998, 19(6): 407-408 |
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| Authors: | WANG Xiaohua SHI Quanlin WANG Yuxia REN Dacui |
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| Abstract: | GaAlAs/GaAs material with gradient refraction index separate confinement (GRIN-SCH) single quantum well structure has been grown by MBE.A laser diode(LD) made from this material is used as the pumping source of Nd:YAG laser to carry out end pumping experiment.Output power of Nd:YAG laser up to 700 mW and optical-to-optical transform efficiency of 26% are obtained at LD current of 3.3 A with the output power of 2.7 W. |
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| Keywords: | LD Nd:YAG Laser Quantum Well |
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