| 热压法制备P型Si0.8Ge0.2合金及其热电性能 |
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| 引用本文： | 王丹,徐桂英,张春燕,葛昌纯. 热压法制备P型Si0.8Ge0.2合金及其热电性能[J]. 装备制造技术, 2007, 0(4): 16-17,32 |
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| 作者姓名： | 王丹 徐桂英 张春燕 葛昌纯 |
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| 作者单位： | 北京科技大学特种陶瓷与粉末冶金研究室,北京,100083 |
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| 摘 要： | 采用真空熔炼和热压烧结法制备了B含量为0．3％～０．72％的P型Si0．8Ge0．2固溶体合金，对样品进行了物相结构分析和微观形貌表征，并研究了掺B量对合金热电性能的影响。结果表明：随着B掺杂量的增加，电导率σ增大，塞贝克系数α减小。功率因子α2σ在B掺入量约为0．6％时达到最大值。
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| 关 键 词： | SiGe合金 热电材料 超高压 |
| 文章编号： | 1672-545X（2007）04-0016-02 |
| 修稿时间： | 2007-02-01 |
Synthesis and Thermoelectric Properties of P-type Si0.8Ge0.2 Alloys by Hot Pressing |
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| WANG Dan,XU Gui-ying,ZHANG Chun-yan,GE Chang-chun. Synthesis and Thermoelectric Properties of P-type Si0.8Ge0.2 Alloys by Hot Pressing[J]. , 2007, 0(4): 16-17,32 |
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| Authors: | WANG Dan XU Gui-ying ZHANG Chun-yan GE Chang-chun |
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| Affiliation: | The Laboratory of Special Ceramics and Powder Metallurgy,University of Science and Technology Beijing, Beijing 100083, China |
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| Abstract: | P-type Si0.8Ge0.2 alloys doped with 0.3%-0.72 % B have been synthesized by melting in vacuum and hot pressing. Phase structure and micromorphology, as well as the B dependence of thermoelectric parameter at room temperature were observed. The results show that the electrical conductivity increases with the increase of B contents, whereas the Seebeck coefficient decreases. The power factor gains a maximum when the B contents are 0.6 %. |
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| Keywords: | SiGe alloys thermoelectric materials hot pressing |
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