热压法制备P型Si0.8Ge0.2合金及其热电性能 |
| |
引用本文: | 王丹,徐桂英,张春燕,葛昌纯.热压法制备P型Si0.8Ge0.2合金及其热电性能[J].装备制造技术,2007(4):16-17,32. |
| |
作者姓名: | 王丹 徐桂英 张春燕 葛昌纯 |
| |
作者单位: | 北京科技大学特种陶瓷与粉末冶金研究室,北京,100083 |
| |
摘 要: | 采用真空熔炼和热压烧结法制备了B含量为0.3%~0.72%的P型Si0.8Ge0.2固溶体合金,对样品进行了物相结构分析和微观形貌表征,并研究了掺B量对合金热电性能的影响。结果表明:随着B掺杂量的增加,电导率σ增大,塞贝克系数α减小。功率因子α2σ在B掺入量约为0.6%时达到最大值。
|
关 键 词: | SiGe合金 热电材料 超高压 |
文章编号: | 1672-545X(2007)04-0016-02 |
修稿时间: | 2007-02-01 |
Synthesis and Thermoelectric Properties of P-type Si0.8Ge0.2 Alloys by Hot Pressing |
| |
Authors: | WANG Dan XU Gui-ying ZHANG Chun-yan GE Chang-chun |
| |
Affiliation: | The Laboratory of Special Ceramics and Powder Metallurgy,University of Science and Technology Beijing, Beijing 100083, China |
| |
Abstract: | P-type Si0.8Ge0.2 alloys doped with 0.3%-0.72 % B have been synthesized by melting in vacuum and hot pressing. Phase structure and micromorphology, as well as the B dependence of thermoelectric parameter at room temperature were observed. The results show that the electrical conductivity increases with the increase of B contents, whereas the Seebeck coefficient decreases. The power factor gains a maximum when the B contents are 0.6 %. |
| |
Keywords: | SiGe alloys thermoelectric materials hot pressing |
本文献已被 CNKI 维普 万方数据 等数据库收录! |