半导体腐蚀进程中表面液层热对流信息的红外表征

研究了半导体腐蚀过程中液层的红外热像分布特性。经处理分析,实现了对任意时刻表面液层的热对流信息的红外表征。半导体腐蚀过程中产生的化学反应会有热量的释放或吸收,这会引起液层之间能量的交换,从而导致腐蚀液温度的变化。利用红外热像仪可以实时监测这一特性,也可为深入分析、表征液层热对流奠定基础。实验结果表明,越靠近半导体材料与腐蚀液接触面的位置,液层的温度变化越显著,且以半导体材料为中心,由内而外呈梯度状降低,水平液层间的热对流速率明显大于竖直液层间的速率;提取的红外热像截面图可以清楚地表征水平液层及竖直液层的温度变化特性。该方法对分析任意时刻液层的热对流信息具有重要的价值。

Infrared Characterization of Thermal Convection of Liquid-layer in Semiconductor Etching Process

The distribution characteristics of infrared images of liquid-layers in etching process of semiconductor are studied. Through the processing of infrared images, characterization of thermal convection between liquid-layers at any time is realized. The chemical reaction occurred in the etching process of semiconductor can result in energy release and absorption which can cause the exchange of energy between liquid-layers, and hence lead to the change of etching temperature. This characteristic can be monitored by an infrared thermal imager in real time and thus the basis can be laid for the further analysis and characterization of thermal convection of liquid-layers. Experimental results have shown that the closer the location to the interface of semiconductor material with the etching liquid, the more remarkable the temperature change of liquid-layers is. Moreover, the temperature is decreased in a gradient form from internal area to external area around the semiconductor material. The thermal convection of horizontal liquid-layer is obviously quicker than that of the vertical liquid layer. The extracted infrared cross-section image can clearly characterize the temperature changing characteristics of the horizontal liquid-layer and the vertical liquid layer. The method is of important value to the analysis of thermal convection information of liquid-layers at any time.