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| InGaAs/AlGaAs半导体激光器二维阵列 | |
| 引用本文： | 辛国锋,陈国鹰,冯荣珠,花吉珍,安振峰. InGaAs/AlGaAs半导体激光器二维阵列[J]. 中国激光, 2003, 30(8): 684-686 |
| 作者姓名： | 辛国锋 陈国鹰 冯荣珠 花吉珍 安振峰 |
| 作者单位： | 1. 河北工业大学信息学院微电子所,天津,300130;中国电子科技集团公司第十三研究所光电专业部,河北,石家庄,050051 2. 河北工业大学信息学院微电子所,天津,300130 3. 中国电子科技集团公司第十三研究所光电专业部,河北,石家庄,050051 |
| 摘 要： | 用金属有机化合物气相淀积 (MOCVD)技术外延生长了InGaAs/AlGaAs分别限制应变单量子阱激光器材料。利用该材料制成半导体激光器一维线阵列 ,然后再串联组装成二维阵列 ,在 1 0 0 0 μs的输入脉宽下 ,输出峰值功率达到 730W (77A) ,输出光功率密度为 4 87W/cm2 ,中心激射波长为 90 3nm ,光谱半宽 (FWHM )为 4 4nm。在此条件下可以稳定工作 86 0 0h以上 |
| 关 键 词： | 激光技术 半导体激光器 金属有机化合物气相淀积 二维阵列 分别限制单量子阱 |
| 收稿时间： | 2002-12-26 |
InGaAs/AlGaAs Semiconductor Laser 2-D Arrays |
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| XIN Guo feng ,,CHEN Guo ying ,FENG Rong zhu ,HUA Ji zhen ,AN Zhen feng Research Institute of Microelectronics,College of Information,Hebei Univ. of Tech.,Tianjin ,China The Office of Photoelectric,th Research Institute of CETC,Shijiazhuang,Hebei ,China. InGaAs/AlGaAs Semiconductor Laser 2-D Arrays[J]. Chinese Journal of Lasers, 2003, 30(8): 684-686 | |
| Authors: | XIN Guo feng CHEN Guo ying FENG Rong zhu HUA Ji zhen AN Zhen feng Research Institute of Microelectronics College of Information Hebei Univ. of Tech. Tianjin China The Office of Photoelectric th Research Institute of CETC Shijiazhuang Hebei China |
| Affiliation: | XIN Guo feng 1,2,CHEN Guo ying 1,FENG Rong zhu 2,HUA Ji zhen 2,AN Zhen feng 2 1Research Institute of Microelectronics,College of Information,Hebei Univ. of Tech.,Tianjin 300130,China 2The Office of Photoelectric,13th Research Institute of CETC,Shijiazhuang,Hebei 050051,China |
| Abstract: | Materials of InGaAs/AlGaAs separate confinement heterostructure strained single quantum well were grown by the technology of metal organic chemical vapor deposition (MOCVD). The 1 D semiconductor laser linear arrays were made using this materials,then they were assembled to form 2 D array. It′s peak wavelength is 903 nm, the full width at half maximum (FWHM) is 4 4 nm, the peak output power is 730 W (pulse width 1000 μs, drive current 77 A), and the density of output power is 487 W/cm 2. The laser can work very reliably over 8600 hours in this condition. |
| Keywords: | laser technique semiconductor laser metal organic chemical vapor deposition (MOCVD) 2-D array separate confinement heterostructure single quantum well |
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