|
|||||
|
|
Extracting the series resistance and effective channel length of short-channel MOSFETs at liquid nitrogen temperature |
|
| Authors: | FJ García Snchez A Ortiz-Conde M García Núez RL Anderson |
| Affiliation: | a Departamento de Electrónica, Universidad Simón Bolívar, Apartado 89000, Caracas 1080-A, Venezuela b Instituto de Ingeniería, Apartado 40200, Caracas 1040-A, Venezuela c Cryoelectronics Laboratory, University of Vermont, Burlington, VT 05405, U.S.A. |
| Abstract: | We present a simple method to extract the effective channel length and the gate voltage dependent series resistance of p-channel MOSFETs. The method is used at room and at liquid nitrogen temperatures on devices with mask channel lengths in the range of 0.6–2.0 μm. The good agreement found at 77 and 300 K between the experimental drain current-voltage characteristics of the devices and those computed from the extracted parameter verifies the validity of the method. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |