Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations |
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Authors: | S K Islam F C Jain |
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Affiliation: | 1. Department of Electrical and Computer Engineering, University of Tennessee, Knoxville, Tennessee, 37996-2100, USA 2. Electrical & Computer Engineering Deparment, 260 Glenbrook Road U-157, Storrs, Connecticut, 06269-3157, USA
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Abstract: | A Modulation-Doped Field-Effect Transistor (MODFET) structure having quantum wire channel realized in InGaN-GaN material system is presented. This paper presents design and analysis of a novel one-dimensional Modulation-Doped Field-Effect transistor (1D MODFET) in InGaN-GaN material system for microwave and millimeter wave applications. An analytical model predicting the transport characteristics of the proposed MODFET device is also presented. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f T) of the proposed device is computed as a function of the gate voltage V G. The results are compared with two-dimensional GaN/AlGaN MODFET and HFET devices. The analytical model also predicts that 0.25 μm channel length devices will extend the use of InGaN-GaN MODFETs to above 90GHz. |
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