High efficiency graphene solar cells by chemical doping |
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Authors: | Miao Xiaochang Tongay Sefaattin Petterson Maureen K Berke Kara Rinzler Andrew G Appleton Bill R Hebard Arthur F |
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Affiliation: | Department of Physics, University of Florida, Gainesville, Florida 32611, United States. |
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Abstract: | We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date. Current-voltage, capacitance-voltage, and external quantum efficiency measurements show the enhancement to be due to the doping-induced shift in the graphene chemical potential that increases the graphene carrier density (decreasing the cell series resistance) and increases the cell's built-in potential (increasing the open circuit voltage) both of which improve the solar cell fill factor. |
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