Monolithic integration of fully ion-implanted lateral GaInAs pin detector/InP JFET amplifier for 1.3-1.55 mu m optical receivers |
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| Authors: | Lee W.S. Kitching S.A. Bland S.W. |
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| Affiliation: | STC Technol. Ltd., Harlow, UK; |
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| Abstract: | An optical receiver front-end consisting of a lateral interdigitated GaInAs pin detector integrated with an InP JFET amplifier has been fabricated. This lateral detector structure simplifies the GaInAs material growth requirement to a single layer and provides low capacitance. A quasiplanar approach has been developed in conjunction with a two-level metallisation interconnect scheme. An optical sensitivity of -29 dBm was measured at 560 Mbit/s and 1.3 mu m wavelength.<> |
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