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Recombination Effect as Component of Residual Defect in Silicon Surface Barrier Detector
Abstract:The thermal conductivity of graphite components used as in-core components in high-temperature gascooled reactors (HTGRs) is reduced by neutron irradiation during reactor operation. The reduction in thermal conductivity is expected to be reversed by thermal annealing when the irradiated graphite component is heated above its original irradiation temperature. In this study, to develop an evaluation model for the thermal annealing effect on the thermal conductivity of IG-110 graphite for the HTGRs, the thermal annealing effect evaluated quantitatively at irradiation temperatures of up to 1,200°C and neutron fluences of up to 1.5 dpa. Moreover, the thermal conductivity of IG-110 graphite was calculated by using a modified thermal resistance model considering the thermal annealing effect. The following results were obtained. (1) The thermal annealing effect on the thermal conductivity of IG-110 graphite could be evaluated quantitatively and a thermal annealing model was developed based on the experimental results at irradiation temperatures of up to 1,200°C and neutron fluences of up to 1.5 dpa. (2) The thermal conductivities of IG-110 graphite calculated by using the modified thermal resistance model considering the thermal annealing effect showed good agreement with experimental measurements. This study has shown that it is possible to evaluate the annealed thermal conductivity of IG-110 graphite by using the modified thermal resistance model at irradiation temperatures of 550–1150°C and irradiation fluences of up to 1.5 dpa.
Keywords:silicon surface barrier detector  pulse height defect  residual defect  plasma delay  plasma column  depletion layer  dielectricity  recombination effect  electrons  holes  charged particle  accelerator  micro beam
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